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MRF8S9100HR5
MRF8S9100HR5
RF FETs MRF8S9100HR5
NXP
MRF8S9100HR5
--
Diodes, Transistors and Thyristors
RF FETs
MRF8S9100HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)72(Typ)
Supplier PackageNI-780
Mode of OperationGSM|GSM EDGE
Maximum Frequency (MHz)960
Minimum Frequency (MHz)865
Typical Power Gain (dB)19.3
Number of Elements per Chip1
Typical Drain Efficiency (%)54.1
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)70
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Description
Trans RF MOSFET N-CH 70V 3-Pin NI-780 T/R
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