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PXFC192207FHV3R0XTMA1
PXFC192207FHV3R0XTMA1
RF FETs PXFC192207FHV3R0XTMA1
Infineon
PXFC192207FHV3R0XTMA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)220
Maximum IDSS (uA)10
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1990
Minimum Frequency (MHz)1805
Typical Power Gain (dB)20.5
Number of Elements per Chip1
Typical Drain Efficiency (%)32
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (MOhm)30(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V T/R
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