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MRFE6VP61K25NR6
MRFE6VP61K25NR6
RF FETs MRFE6VP61K25NR6
NXP
MRFE6VP61K25NR6
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width10.01(Max)
Package Height3.86(Max)
Package Length32.33(Max)
Output Power (W)1309(Typ)
Supplier PackageCase OM-1230 L
Mode of OperationCW|Pulsed RF
Process TechnologyLDMOS
Maximum Frequency (MHz)600
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)23
Number of Elements per Chip2
Typical Drain Efficiency (%)72.3
Maximum Power Dissipation (mW)3333000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)28
Typical Input Capacitance @ Vds (pF)562@50V
Typical Output Capacitance @ Vds (pF)185@50V
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@50V
Description
Trans RF FET N-CH 133V Medical 5-Pin Case OM-1230 L T/R
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