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MMRF1005HR5
MMRF1005HR5
RF FETs MMRF1005HR5
NXP
MMRF1005HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1005HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)250(Typ)
Supplier PackageNI-780
Maximum IDSS (uA)20
Mode of OperationCW|Pulsed RF
Process TechnologyLDMOS
Maximum Frequency (MHz)1300
Typical Power Gain (dB)20|22.7
Number of Elements per Chip1
Typical Drain Efficiency (%)57
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)120
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)340@50V
Typical Output Capacitance @ Vds (pF)58@50V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@50V
Description
Trans RF FET N-CH 120V 3-Pin NI-780 T/R
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