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MRFE6VP6300-230
MRFE6VP6300-230
RF FETs MRFE6VP6300-230
NXP
MRFE6VP6300-230
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8473.30.11.80
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Output Power (W)300(Typ)
Mode of OperationCW
Maximum Frequency (MHz)600
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)26.5
Number of Elements per Chip2
Typical Drain Efficiency (%)74
Maximum Power Dissipation (mW)1050000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)130
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)188@50V
Typical Output Capacitance @ Vds (pF)76@50V
Typical Reverse Transfer Capacitance @ Vds (pF)0.8@50V
Description
Trans RF FET N-CH 130V
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