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MRFG35005ANT1
MRFG35005ANT1
RF FETs MRFG35005ANT1
NXP
MRFG35005ANT1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialGaAs
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
ConfigurationSingle Dual Source
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)0.45(Typ)
Supplier PackagePLD-1.5
Mode of Operation1-Carrier W-CDMA
Standard Package NamePLD-1.5
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)5000
Minimum Frequency (MHz)500
Typical Power Gain (dB)11
Number of Elements per Chip1
Typical Drain Efficiency (%)26
Maximum Gate Source Voltage (V)-5
Maximum Drain Source Voltage (V)15
Maximum Gate Threshold Voltage (V)0.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Description
RF Power Field Effect Transistor
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