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RF FETs STAC1011-350
STMicroelectronics
STAC1011-350
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Dual Common Source |
| Package Width | 9.91(Max) |
| Package Height | 5.33(Max) |
| Package Length | 34.19(Max) |
| Output Power (W) | 370(Typ) |
| Supplier Package | STAC265B |
| Process Technology | LDMOS |
| Typical Fall Time (ns) | 25(Max) |
| Typical Rise Time (ns) | 50(Max) |
| Maximum Frequency (MHz) | 1090 |
| Minimum Frequency (MHz) | 1030 |
| Typical Power Gain (dB) | 15 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 53 |
| Maximum Power Dissipation (mW) | 1440000 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Forward Transconductance (S) | 2.5(Min) |
| Description |
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