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MRFX035HR5
MRFX035HR5
RF FETs MRFX035HR5
NXP
MRFX035HR5
--
Diodes, Transistors and Thyristors
RF FETs
MRFX035HR5.pdf
Specification
Product AttributeAttribute Value
TypeMOSFET
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width5.97(Max)
Package Height4.45(Max)
Package Length20.45(Max)
Output Power (W)35(Typ)
Supplier PackageNI-360H-2SB
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)512
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)24.8
Number of Elements per Chip1
Typical Drain Efficiency (%)75.8
Maximum Power Dissipation (mW)154000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)179
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Input Capacitance @ Vds (pF)42.8@65V
Typical Output Capacitance @ Vds (pF)13.7@65V
Typical Reverse Transfer Capacitance @ Vds (pF)0.13@65V
Description
Trans RF MOSFET N-CH 179V 3-Pin NI-360H-2SB T/R
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