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MW6S010GNR1
MW6S010GNR1
RF FETs MW6S010GNR1
NXP
MW6S010GNR1
--
Diodes, Transistors and Thyristors
RF FETs
MW6S010GNR1.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width5.97(Max)
Package Height2.08(Max)
Package Length9.7(Max)
Output Power (W)10(Typ)
Supplier PackageTO-270 GULL
Mode of Operation2-Tone
Process TechnologyLDMOS
Standard Package NameTO-270 GULL
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1500
Minimum Frequency (MHz)450
Typical Power Gain (dB)20
Number of Elements per Chip1
Typical Drain Efficiency (%)33
Maximum Power Dissipation (mW)61400
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)23@28V
Typical Output Capacitance @ Vds (pF)10@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.32@28V
Description
Trans RF FET N-CH 68V 3-Pin TO-270 GULL T/R
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