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RF FETs LET9045TR
STMicroelectronics
LET9045TR
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10(Min) |
| Configuration | Single |
| Package Width | 9.4 |
| Package Height | 3.5 |
| Package Length | 9.5 |
| Output Power (W) | 59(Typ) |
| Supplier Package | PowerSO-10RF (Formed lead) |
| Process Technology | LDMOS |
| Standard Package Name | PowerSO-10RF (Formed lead) |
| SVHC Exceeds Threshold | Yes |
| Maximum Frequency (MHz) | 1000 |
| Typical Power Gain (dB) | 17.5 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 65 |
| Maximum Power Dissipation (mW) | 79000 |
| Maximum Gate Source Voltage (V) | 15 |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Operating Temperature (°C) | 165 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 9 |
| Typical Forward Transconductance (S) | 2.5(Min) |
| Typical Input Capacitance @ Vds (pF) | 59@28V |
| Typical Output Capacitance @ Vds (pF) | 28@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.8@28V |
| Description |
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