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RF FETs PD20015-E
STMicroelectronics
PD20015-E
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 20(Min) |
| Configuration | Single |
| Package Width | 9.4 |
| Package Height | 3.5 |
| Package Length | 9.5 |
| Output Power (W) | 23(Typ) |
| Supplier Package | PowerSO-10RF (Formed lead) |
| Maximum IDSS (uA) | 1 |
| Process Technology | LDMOS |
| Standard Package Name | PowerSO-10RF (Formed lead) |
| SVHC Exceeds Threshold | Yes |
| Maximum Frequency (MHz) | 2000 |
| Typical Power Gain (dB) | 11 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 53 |
| Maximum Power Dissipation (mW) | 79000 |
| Maximum Gate Source Voltage (V) | 15 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Operating Temperature (°C) | 165 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 7 |
| Typical Input Capacitance @ Vds (pF) | 55@12.5V |
| Typical Output Capacitance @ Vds (pF) | 40@12.5V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.5@12.5V |
| Description |
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