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MRF8S7235NR3
MRF8S7235NR3
RF FETs MRF8S7235NR3
NXP
MRF8S7235NR3
--
Diodes, Transistors and Thyristors
RF FETs
MRF8S7235NR3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width10.01(Max)
Package Height3.86(Max)
Package Length20.62(Max)
Output Power (W)63(Typ)
Supplier PackageOM-780 EP
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)768
Minimum Frequency (MHz)728
Typical Power Gain (dB)20
Number of Elements per Chip1
Typical Drain Efficiency (%)36.1
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)70
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 70V 3-Pin OM-780 EP T/R
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