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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PD57006TR-E
PD57006TR-E
RF FETs PD57006TR-E
STMicroelectronics
PD57006TR-E
--
Diodes, Transistors and Thyristors
RF FETs
PD57006TR-E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10(Min)
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)6(Min)
Supplier PackagePowerSO-10RF (Formed lead)
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Formed lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)945
Typical Power Gain (dB)15
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Power Dissipation (mW)20000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)1
Typical Forward Transconductance (S)0.58
Typical Input Capacitance @ Vds (pF)27@28V
Typical Output Capacitance @ Vds (pF)14@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.9@28V
Description
Trans RF MOSFET N-CH 65V 1A 3-Pin PowerSO-10RF (Formed lead) T/R
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