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PD85035C
PD85035C
RF FETs PD85035C
STMicroelectronics
PD85035C
--
Diodes, Transistors and Thyristors
RF FETs
PD85035C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle
Package Width6.1(Max)
Package Height4.45(Max)
Package Length9.4(Max)
Output Power (W)35(Min)
Supplier PackageCase M-243
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)108000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)76@12.5V
Typical Output Capacitance @ Vds (pF)45@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)1.4@12.5V
Description
Trans RF FET N-CH 40V 8A 3-Pin Case M-243 Loose
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