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RF FETs SD2931-10W
STMicroelectronics
SD2931-10W
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Loose |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10(Min) |
| Configuration | Single Dual Source |
| Package Width | 12.83(Max) |
| Package Height | 7.11(Max) |
| Package Length | 24.89(Max) |
| Output Power (W) | 150(Min) |
| Supplier Package | Case M-174 |
| Maximum IDSS (uA) | 50 |
| Maximum Frequency (MHz) | 230 |
| Typical Power Gain (dB) | 15 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 65 |
| Maximum Power Dissipation (mW) | 389000 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 125 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 20 |
| Typical Forward Transconductance (S) | 6 |
| Typical Input Capacitance @ Vds (pF) | 480@50V |
| Typical Output Capacitance @ Vds (pF) | 190@50V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 18@50V |
| Description |
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