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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PD85035TR-E
PD85035TR-E
RF FETs PD85035TR-E
STMicroelectronics
PD85035TR-E
--
Diodes, Transistors and Thyristors
RF FETs
PD85035TR-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20(Min)
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)40(Typ)
Supplier PackagePowerSO-10RF (Formed lead)
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Formed lead)
Maximum Frequency (MHz)1000
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)72
Maximum Power Dissipation (mW)95000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)40
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)76@12.5V
Typical Output Capacitance @ Vds (pF)45@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)1.4@12.5V
Description
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) T/R
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