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RF FETs PD54003L-E
STMicroelectronics
PD54003L-E
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 14 |
| Automotive | No |
| PCB changed | 14 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 20(Min) |
| Configuration | Single Quad Drain Quad Gate Quad Source |
| Package Width | 5 |
| Package Height | 0.88 |
| Package Length | 5 |
| Output Power (W) | 3(Min) |
| Supplier Package | Power Flat |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1000 |
| Typical Power Gain (dB) | 20 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 55 |
| Maximum Power Dissipation (mW) | 19500 |
| Maximum Gate Source Voltage (V) | ±15 |
| Maximum Drain Source Voltage (V) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 4 |
| Typical Input Capacitance @ Vds (pF) | 54@7.5V |
| Typical Output Capacitance @ Vds (pF) | 43@7.5V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 4@7.5V |
| Description |
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