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PD85050S
PD85050S
RF FETs PD85050S
STMicroelectronics
PD85050S
--
Diodes, Transistors and Thyristors
RF FETs
PD85050S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width9.4
Package Height3.5
Package Length9.5
Output Power (W)55(Typ)
Supplier PackagePowerSO-10RF (Straight lead)
Maximum IDSS (uA)1
Process TechnologyLDMOS
Standard Package NamePowerSO-10RF (Straight lead)
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)1
Typical Power Gain (dB)12
Number of Elements per Chip1
Typical Drain Efficiency (%)60
Maximum Power Dissipation (mW)105000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)50
Maximum Operating Temperature (°C)165
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)8
Typical Input Capacitance @ Vds (pF)110@12V
Typical Output Capacitance @ Vds (pF)70@12V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)3.6@12V
Description
Trans RF FET N-CH 50V 3-Pin PowerSO-10RF (Straight lead) Tube
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