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RF FETs PTFA072401ELV5XWSA1
Infineon
PTFA072401ELV5XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Output Power (W)240
Maximum IDSS (uA)10
Mode of Operation2-Carrier W-CDMA|2-Tone
Process TechnologyLDMOS
Maximum Frequency (MHz)770
Minimum Frequency (MHz)725
Typical Power Gain (dB)19
Number of Elements per Chip1
Typical Drain Efficiency (%)45
Maximum Power Dissipation (mW)700000
Maximum Gate Source Voltage (V)3
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)1820@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 65V Tray
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