Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tray |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Maximum VSWR | 10 |
Configuration | Single |
Output Power (W) | 240 |
Maximum IDSS (uA) | 10 |
Mode of Operation | 2-Carrier W-CDMA|2-Tone |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 770 |
Minimum Frequency (MHz) | 725 |
Typical Power Gain (dB) | 19 |
Number of Elements per Chip | 1 |
Typical Drain Efficiency (%) | 45 |
Maximum Power Dissipation (mW) | 700000 |
Maximum Gate Source Voltage (V) | 3 |
Maximum Drain Source Voltage (V) | 65 |
Maximum Operating Temperature (°C) | 200 |
Minimum Operating Temperature (°C) | -40 |
Maximum Drain Source Resistance (MOhm) | 1820@10V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Description |