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PTFA190451EV4XWSA1
PTFA190451EV4XWSA1
RF FETs PTFA190451EV4XWSA1
Infineon
PTFA190451EV4XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width10.16
Package Height3.56
Package Length20.31
Output Power (W)45
Supplier PackageCase 36265
Mode of OperationW-CDMA|2-Tone
Process TechnologyLDMOS
Maximum Frequency (MHz)1990
Minimum Frequency (MHz)1930
Typical Power Gain (dB)17.5
Number of Elements per Chip1
Typical Drain Efficiency (%)38
Maximum Power Dissipation (mW)192000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)910(Typ)@10V
Description
Trans RF MOSFET N-CH 65V 3-Pin Case 36265 Tray
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