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PTFA212001EV4R250XTMA1
PTFA212001EV4R250XTMA1
RF FETs PTFA212001EV4R250XTMA1
Infineon
PTFA212001EV4R250XTMA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Package Width13.72
Package Height4.11
Package Length34.04
Output Power (W)200
Supplier PackageCase 36260
Mode of Operation1-Carrier W-CDMA|2-Carrier W-CDMA|2-Tone|CW
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)15.8|15.5
Number of Elements per Chip1
Typical Drain Efficiency (%)38.5
Maximum Power Dissipation (mW)625000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (mOhm)50(Typ)@10V
Description
Trans RF MOSFET N-CH 65V 3-Pin Case 36260 T/R
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