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MRF1K50GNR5
MRF1K50GNR5
RF FETs MRF1K50GNR5
NXP
MRF1K50GNR5
--
Diodes, Transistors and Thyristors
RF FETs
MRF1K50GNR5.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
Package Width10.01(Max)
Package Height3.86(Max)
Package Length32.33(Max)
Output Power (W)1500(Typ)
Supplier PackageCase OM-1230G L
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)500
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)23
Typical Drain Efficiency (%)73
Maximum Power Dissipation (mW)2941000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)33.5
Typical Input Capacitance @ Vds (pF)683@50V
Typical Output Capacitance @ Vds (pF)219@50V
Typical Reverse Transfer Capacitance @ Vds (pF)5.77@50V
Description
Trans RF FET N-CH 133V 4-Pin Case OM-1230G L T/R
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