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PTFB211803FLV2R250XTMA1
PTFB211803FLV2R250XTMA1
RF FETs PTFB211803FLV2R250XTMA1
Infineon
PTFB211803FLV2R250XTMA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.78
Package Height4.04
Package Length23.11
Output Power (W)180
Supplier PackageCase 34288-4/2
Maximum IDSS (uA)10
Mode of OperationCW|2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)17.5
Number of Elements per Chip1
Typical Drain Efficiency (%)29.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (mOhm)50(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
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