Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tray |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Common Source |
Output Power (W) | 350 |
Maximum IDSS (uA) | 10 |
Mode of Operation | 1-Carrier W-CDMA |
Process Technology | LDMOS |
Maximum Frequency (MHz) | 2400 |
Minimum Frequency (MHz) | 2300 |
Typical Power Gain (dB) | 15 |
Number of Elements per Chip | 2 |
Typical Drain Efficiency (%) | 45 |
Maximum Gate Source Voltage (V) | 10 |
Maximum Drain Source Voltage (V) | 65 |
Maximum Operating Temperature (°C) | 225 |
Minimum Operating Temperature (°C) | -65 |
Maximum Drain Source Resistance (MOhm) | 88(Typ)@10V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Description |