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RF FETs RF3L05250CB4
STMicroelectronics
RF3L05250CB4
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| PCB changed | 5 |
| Part Status | Active |
| Maximum VSWR | 20 |
| Configuration | Dual Common Source |
| Package Width | 5.85 |
| Package Height | 4.85 |
| Package Length | 28.95 |
| Output Power (W) | 250(Typ) |
| Supplier Package | LBB |
| Maximum IDSS (uA) | 1 |
| Mode of Operation | Pulsed CW |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 1000 |
| Typical Power Gain (dB) | 18 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 62 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum Drain Source Voltage (V) | 90 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Input Capacitance @ Vds (pF) | 128@28V |
| Typical Output Capacitance @ Vds (pF) | 43@28V |
| Maximum Drain Source Resistance (mOhm) | 1000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.4@28V |
| Description |
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