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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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RF FETs RF3L05250CB4
STMicroelectronics
RF3L05250CB4
--
Diodes, Transistors and Thyristors
RF FETs
RF3L05250CB4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Maximum VSWR20
ConfigurationDual Common Source
Package Width5.85
Package Height4.85
Package Length28.95
Output Power (W)250(Typ)
Supplier PackageLBB
Maximum IDSS (uA)1
Mode of OperationPulsed CW
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)18
Supplier Temperature GradeIndustrial
Number of Elements per Chip2
Typical Drain Efficiency (%)62
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)90
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)128@28V
Typical Output Capacitance @ Vds (pF)43@28V
Maximum Drain Source Resistance (mOhm)1000@10V
Maximum Gate Source Leakage Current (nA)100
Typical Reverse Transfer Capacitance @ Vds (pF)2.4@28V
Description
Trans RF MOSFET 90V 5-Pin LBB T/R
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