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J309-E3
J309-E3
RF FETs J309-E3
Vishay
J309-E3
--
Diodes, Transistors and Thyristors
RF FETs
J309-E3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeJFET
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width3.68
Package Height4.7(Max)
Package Length4.7
Supplier PackageTO-92
Maximum IDSS (uA)30000
Standard Package NameTO-92
Typical Power Gain (dB)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Maximum Gate Source Voltage (V)-25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Forward Transconductance (S)0.014
Typical Input Capacitance @ Vds (pF)4@10V
Maximum Drain Source Resistance (mOhm)35000(Typ)
Maximum Gate Source Leakage Current (nA)1
Typical Reverse Transfer Capacitance @ Vds (pF)1.9@10V
Description
Trans RF FET N-CH 3-Pin TO-92
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