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SD57060-01
SD57060-01
RF FETs SD57060-01
STMicroelectronics
SD57060-01
--
Diodes, Transistors and Thyristors
RF FETs
SD57060-01.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingLoose
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5(Min)
ConfigurationSingle
Package Width6.09(Max)
Package Height3.94(Max)
Package Length9.91(Max)
Output Power (W)60(Min)
Supplier PackageCase M-250
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Typical Power Gain (dB)15
Number of Elements per Chip1
Typical Drain Efficiency (%)60
Maximum Power Dissipation (mW)118000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)7
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)80@28V
Typical Output Capacitance @ Vds (pF)44@28V
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@28V
Description
Trans RF MOSFET N-CH 65V 7A 3-Pin Case M-250 Loose
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