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MRF6V10010NR4
MRF6V10010NR4
RF FETs MRF6V10010NR4
NXP
MRF6V10010NR4
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)10(Typ)
Supplier PackagePLD-1.5
Maximum IDSS (uA)2500
Process TechnologyLDMOS
Standard Package NamePLD-1.5
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1400
Minimum Frequency (MHz)960
Typical Power Gain (dB)25
Number of Elements per Chip1
Typical Drain Efficiency (%)69
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)100
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)9.55@50V
Typical Output Capacitance @ Vds (pF)3.38@50V
Maximum Gate Source Leakage Current (nA)10000
Typical Reverse Transfer Capacitance @ Vds (pF)0.1@50V
Description
Trans RF FET N-CH 100V 4-Pin PLD-1.5 T/R
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