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RF FETs STAC1011-500
STMicroelectronics
STAC1011-500
--
Diodes, Transistors and Thyristors
RF FETs
STAC1011-500.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Output Power (W)500(Typ)
Supplier PackageSTAC780F
Maximum IDSS (uA)1
Process TechnologyLDMOS
Maximum Frequency (MHz)1200
Minimum Frequency (MHz)700
Typical Power Gain (dB)16
Number of Elements per Chip2
Typical Drain Efficiency (%)59
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Output Capacitance @ Vds (pF)44
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)2
Description
Trans RF FET N-CH 110V 4-Pin STAC780F
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