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STAC4932B
STAC4932B
RF FETs STAC4932B
STMicroelectronics
STAC4932B
--
Diodes, Transistors and Thyristors
RF FETs
STAC4932B.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Source
Package Width9.78
Package Height5.33
Package Length34.04
Output Power (W)1200(Typ)
Supplier PackageSTAC244B
Maximum IDSS (uA)1000
Process TechnologySTAC
Maximum Frequency (MHz)250
Typical Power Gain (dB)26
Number of Elements per Chip2
Typical Drain Efficiency (%)60
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)200
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)6
Typical Input Capacitance @ Vds (pF)570@100V
Typical Output Capacitance @ Vds (pF)134@100V
Maximum Gate Source Leakage Current (nA)250
Typical Reverse Transfer Capacitance @ Vds (pF)8@100V
Description
Trans RF FET N-CH 200V 5-Pin STAC244B Loose
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