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DRAM Chip MT46H64M16LFBF-5 IT:BTR
Micron Technology
MT46H64M16LFBF-5 IT:BTR
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Memory
DRAM Chip
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| DRAM Type | Mobile LPDDR SDRAM |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Part Status | Active |
| Organization | 64Mx16 |
| Interface Type | LVCMOS |
| Chip Density (bit) | 1G |
| Process Technology | CMOS |
| Data Bus Width (bit) | 16 |
| Operating Current (mA) | 135 |
| Address Bus Width (bit) | 16 |
| Maximum Access Time (ns) | 5|6.5 |
| Maximum Clock Rate (MHz) | 400 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 16M |
| Number of Bits/Word (bit) | 16 |
| Number of I/O Lines (bit) | 16 |
| Supplier Temperature Grade | Industrial |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 1.95 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Description |
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