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2N6350
2N6350
Darlington BJT 2N6350
Microchip Technology
2N6350
--
Diodes, Transistors and Thyristors
Darlington BJT
2N6350.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeThrough Hole
PCB changed4
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Supplier PackageTO-33
Standard Package NameTO
Minimum DC Current Gain2000@1A@5V|2000@5A@5V|400@10A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Continuous DC Collector Current (A)5
Maximum Collector-Emitter Saturation Voltage (V)1.5@5mA@5A
Description
Trans Darlington NPN 80V 5A 1000mW 4-Pin TO-33
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