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RJK6013DPE-WS#J3
RJK6013DPE-WS#J3
Discrete Semiconductor Products RJK6013DPE-WS#J3
Renesas Electronics
RJK6013DPE-WS#J3
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Discrete Semiconductor Products
Specification
Product AttributeAttribute Value
PackageTape & Reel (TR)
FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / CaseSC-83
Product StatusObsolete
Vgs(th) (Max) @ Id4.5V @ 1mA
Operating Temperature150°C
Rds On (Max) @ Id, Vgs700mOhm @ 5.5A, 10V
Power Dissipation (Max)100W (Tc)
Supplier Device PackageLDPAK
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Description
MOSFET N-CH 600V 11A 4LDPAK
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