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Flash AM29DL800BB-90EFT
Cypress
AM29DL800BB-90EFT
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
Bank Size1/7Mb
Cell TypeNOR
ECCN (US)EAR99
AutomotiveNo
Boot BlockYes
ECC SupportNo
Part StatusObsolete
Sector Size8Kbyte x 4|16Kbyte x 2|32Kbyte x 2|64Kbyte x 14
Timing TypeAsynchronous
ArchitectureSectored
Interface TypeParallel
Number of Banks2
Number of Words1M/512K
ProgrammabilityYes
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleYes
Process TechnologyCMOS
OE Access Time (ns)35
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)90
Location of Boot BlockBottom
Maximum Erase Time (s)15/Sector
Operating Current (mA)12
Address Bus Width (bit)20/19
Programming Voltage (V)2.7 to 3.6
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)27000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 90ns
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