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LE25U81AQETXG
LE25U81AQETXG
Flash LE25U81AQETXG
onsemi
LE25U81AQETXG
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Page Size256byte
Pin Count8
AutomotiveNo
Boot BlockNo
ECC SupportNo
PCB changed8
Part StatusObsolete
Sector Size4Kbyte x 256
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI)
Package Height0.8(Max)
Package Length5
Number of Words1M
ProgrammabilityYes
Supplier PackageVDFN EP
Block OrganizationSymmetrical
Chip Density (bit)8M
Command CompatibleNo
Program Current (mA)40
Support of Page ModeNo
Maximum Erase Time (S)6/Chip
Operating Current (mA)10
Address Bus Width (bit)20
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000
Maximum Programming Time (ms)0.5/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2.7
Minimum Operating Supply Voltage (V)2.3
Typical Operating Supply Voltage (V)2.5
Description
Flash Serial (SPI, Dual SPI) 2.5V 8M-bit 1M x 8 8-Pin VDFN EP T/R
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