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S25FS128SAGNFI003
S25FS128SAGNFI003
Flash S25FS128SAGNFI003
Infineon
S25FS128SAGNFI003
--
Memory
Flash
Specification
Product AttributeAttribute Value
HTS8542.32.00.71
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
Page Size256byte|512byte
Pin Count8
AutomotiveNo
Boot BlockNo
ECC SupportYes
PCB changed8
Part StatusActive
Sector Size64Kbyte x 256|256Kbyte x 64
Timing TypeSynchronous
ArchitectureSectored
Package Width6
Interface TypeSerial (SPI, Dual SPI, Quad SPI)
Package Height0.73
Package Length5
Number of Words128M/64M/32M
ProgrammabilityYes
Supplier PackageWSON EP
Block OrganizationSymmetrical
Chip Density (bit)128M
Command CompatibleYes
Process Technology65nm
Program Current (mA)100
Support of Page ModeNo
Max. Access Time (ns)8
Maximum Erase Time (s)180/Chip
Operating Current (mA)100
Address Bus Width (bit)32
Programming Voltage (V)1.7 to 2
Number of Bits/Word (bit)1/2/4
Minimum Endurance (Cycles)100000
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)2/Page
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)2
Minimum Operating Supply Voltage (V)1.7
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 8ns 8-Pin WSON EP T/R
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