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S29AL032D70BFI002
S29AL032D70BFI002
Flash S29AL032D70BFI002
Cypress
S29AL032D70BFI002
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)3A991.b.1.a
PackagingTape and Reel
Pin Count48
AutomotiveNo
Boot BlockNo
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size64Kbyte x 64
Timing TypeAsynchronous
ArchitectureSectored
Package Width6
Interface TypeParallel
Package Height0.73(Max)
Package Length10
Number of Words4M
ProgrammabilityYes
Supplier PackageFBGA
Block OrganizationSymmetrical
Chip Density (bit)32M
Command CompatibleYes
Process Technology200nm, MirrorBit
OE Access Time (ns)30
Program Current (mA)35
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameBGA
Maximum Erase Time (s)10/Sector
Operating Current (mA)35
Address Bus Width (bit)22
Programming Voltage (V)2.7 to 3.6|11.5 to 12.5
Number of Bits/Word (bit)8
Minimum Endurance (Cycles)100000(Typ)
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)108000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)3.6
Minimum Operating Supply Voltage (V)2.7
Typical Operating Supply Voltage (V)3|3.3
Description
NOR Flash Parallel 3V/3.3V 32M-bit 4M x 8 70ns 48-Pin FBGA T/R
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