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2N2605
2N2605
GP BJT 2N2605
Microchip Technology
2N2605
--
Diodes, Transistors and Thyristors
GP BJT
2N2605.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
ConfigurationSingle
Package Height2.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-46
Standard Package NameTO
Minimum DC Current Gain100@10uA@5V|150@500uA@5V|100@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)70
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)0.9@500uA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@500uA@10mA
Description
Trans GP BJT PNP 60V 0.03A 3-Pin TO-46
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