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2N3507U4
2N3507U4
GP BJT 2N3507U4
Microchip Technology
2N3507U4
--
Diodes, Transistors and Thyristors
GP BJT
2N3507U4.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.91(Max)
Package Length3.94(Max)
Product CategoryBipolar Power
Supplier PackageCase U4
Minimum DC Current Gain30@1.5A@2V|35@500mA@1V|25@2.5A@3V|20@3A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1.3@150mA@1.5A|2@250mA@2.5A
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|1.5@250mA@2.5A|1@150mA@1.5A
Description
Trans GP BJT NPN 50V 3A 1000mW 3-Pin Case U4 Tray
Environmental Documents
Product Compliance
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