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GP BJT MPS650RLRAG (CUT T&R)
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MPS650RLRAG (CUT T&R)
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Type | NPN |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 40@2A@2V|75@1A@2V|75@500mA@2V|75@50mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 625 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 75(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@200mA@2A|0.3@100mA@1A |
| Description |
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