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2N4449
2N4449
GP BJT 2N4449
Microchip Technology
2N4449
--
Diodes, Transistors and Thyristors
GP BJT
2N4449.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height2.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-46
Standard Package NameTO
Minimum DC Current Gain20@100mA@1V|30@30mA@0.4V|40@10mA@1V|40@10mA@0.35V
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@100mA|0.9@3mA@30mA|0.85@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.45@10mA@100mA|0.25@3mA@30mA|0.2@1mA@10mA
Description
Trans GP BJT NPN 15V 360mW 3-Pin TO-46 Bag
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