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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2N5551RUBT
2N5551RUBT
GP BJT 2N5551RUBT
STMicroelectronics
2N5551RUBT
--
Diodes, Transistors and Thyristors
GP BJT
2N5551RUBT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.54
Package Height1.42(Max)
Package Length3.05
Product CategoryBipolar Power
Supplier PackageLCC-3UB
SVHC Exceeds ThresholdYes
Minimum DC Current Gain80@1mA@5V|80@10mA@5V|30@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)580
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA
Description
Trans GP BJT NPN 160V 0.6A 580mW 4-Pin LCC-3UB Tray
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