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GP BJT 2N5551RUBT
STMicroelectronics
2N5551RUBT
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2.54 |
| Package Height | 1.42(Max) |
| Package Length | 3.05 |
| Product Category | Bipolar Power |
| Supplier Package | LCC-3UB |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 80@1mA@5V|80@10mA@5V|30@50mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 580 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA |
| Description |
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