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2SA1552S-TL-H
2SA1552S-TL-H
GP BJT 2SA1552S-TL-H
onsemi
2SA1552S-TL-H
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle Dual Collector
Package Width5.5
Package Height2.3
Package Length6.5
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain140@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT PNP 160V 1.5A 1000mW 3-Pin(2+Tab) DPAK T/R
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