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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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2SC4519-6-TB-E
2SC4519-6-TB-E
GP BJT 2SC4519-6-TB-E
onsemi
2SC4519-6-TB-E
--
Diodes, Transistors and Thyristors
GP BJT
2SC4519-6-TB-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.5
Package Height1.1
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageCase CP
Minimum DC Current Gain200@50mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)350(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)500
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@200mA
Maximum Collector-Emitter Saturation Voltage (V)0.45@10mA@200mA
Description
Trans GP BJT NPN 45V 0.5A 200mW 3-Pin Case CP
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