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BFN19H6327XTSA1
BFN19H6327XTSA1
GP BJT BFN19H6327XTSA1
Infineon
BFN19H6327XTSA1
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
PCB changed3
Part StatusLTB
ConfigurationSingle Dual Collector
Package Width2.5
Package Height1.5
Package Length4.5
Product CategoryBipolar Power
Supplier PackageSOT-89
Minimum DC Current Gain25@1mA@10V|40@10mA@10V|30@30mA@10V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)300
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@2mA@20mA
Description
Trans GP BJT PNP 300V 0.2A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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