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GRP-DATA-JANS2N4033UB
GRP-DATA-JANS2N4033UB
GP BJT GRP-DATA-JANS2N4033UB
Microchip Technology
GRP-DATA-JANS2N4033UB
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain50@0.1mA@5V|100@100mA@5V|70@500mA@5V|25@1A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)0.9@15mA@150mA|12@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@15mA@150mA|0.5@50mA@500mA|1@100mA@1A
Description
Trans GP BJT PNP 80V 1A 500mW 4-Pin Case UB Waffle
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