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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3057A
JAN2N3057A
GP BJT JAN2N3057A
Microchip Technology
JAN2N3057A
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3057A.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height2.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-46
Standard Package NameTO
Minimum DC Current Gain50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)140
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.1@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@15mA@150mA|0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-46 Bag
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