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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3810
JAN2N3810
GP BJT JAN2N3810
Microchip Technology
JAN2N3810
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3810.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Height4.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-78
Standard Package NameTO
Minimum DC Current Gain100@10uA@5V|150@100uA@5V|150@1mA@5V|125@10mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)350
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)0.7@10uA@100uA|0.8@100uA@1mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@10uA@100uA|0.25@100uA@1mA
Description
Trans GP BJT PNP 60V 0.05A 350mW 6-Pin TO-78 Bag
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