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GP BJT JANSR2N2907AUBC
Microchip Technology
JANSR2N2907AUBC
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Not Compliant |
| Material | Si |
| ECCN (US) | 9A604.x |
| Packaging | Waffle |
| Automotive | No |
| Part Status | Active |
| Configuration | Single |
| Product Category | Bipolar Power |
| Minimum DC Current Gain | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 500 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Base Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA|1.6@50mA@500mA |
| Description |
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