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GP BJT KSE13003TH2ATU
onsemi
KSE13003TH2ATU
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 4.7(Max) |
| Package Height | 9.4(Max) |
| Package Length | 10.1(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-220 |
| Standard Package Name | TO-220 |
| Minimum DC Current Gain | 8@0.5A@2V|5@1A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 30000 |
| Maximum DC Collector Current (A) | 1.5 |
| Maximum Emitter Base Voltage (V) | 9 |
| Maximum Collector Base Voltage (V) | 700 |
| Maximum Transition Frequency (MHz) | 4(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 400 |
| Maximum Base Emitter Saturation Voltage (V) | 1@0.1A@0.5A|1.2@0.25A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@0.25A@1A|3@0.5A@1.5A|0.5@0.1A@0.5A |
| Description |
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